Si Hardmask (Si-HM), EUV And Zero Defects
Spin-on Dual Hard Mask Material | JSR Micro, Inc.
![PDF] Chromium oxide as a hard mask material better than metallic chromium | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/56b1bb76acd51804dcf35a31d1cbcb20934471f3/3-Figure1-1.png "PDF] Chromium oxide as a hard mask material better than metallic chromium | Semantic Scholar")
PDF] Chromium oxide as a hard mask material better than metallic chromium | Semantic Scholar
PDF) Sub-100 nm silicon-nitride hard-mask for high aspect-ratio silicon fins
Hard Mask Fabrication (HMF) - NanoSearcher
New silicon hard mask material development for sub-5nm node
KR101484568B1 - High etch-resistant carbon hard mask condensasion polymer and anti-reflection hard mask composition including same, and pattern-forming method of semiconductor device using same - Google Patents
Amorphous Carbon Hard Mask for Multiple Patterning Lithography | Semantic Scholar
Spin on Hard-Mask Material - diagram, schematic, and image 08
Progress in Spin-on Hard Mask Materials for Advanced Lithography | Semantic Scholar
Alpha Carbon Hardmask in 3D-NAND Device Manufacturing Characterization by Multiple Metrology Methods for In-Line Control of High Aspect Ratio Etching - Onto Innovation
Simplified process flow illustrating (a) "via-first" and (b)... | Download Scientific Diagram
Integrated process feasibility of hard-mask for tight pitch interconnects fabrication (MEMS and Nanotechnology)
NIL_vs_NEP-768x604.png
Innovatively composite hard mask to feature sub-30 nm gate patterning - ScienceDirect
SPIE 2021 – Applied Materials – DRAM Scaling - SemiWiki
PDF) Impact of Sacrificial Hard Mask Material in BEOL Integration in Advanced Technology
Conversion of a Patterned Organic Resist into a High Performance Inorganic Hard Mask for High Resolution Pattern Transfer | ACS Nano
KR20160110657A - Polymer for hard mask, hard mask composition including the polymer, and method for forming pattern of semiconductor device using the hard mask composition - Google Patents
Integrated process feasibility of hard-mask for tight pitch interconnects fabrication (MEMS and Nanotechnology)
Etching characteristics of TiN used as hard mask in dielectric etch process: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena: Vol 24, No 5
The micropatterns (first figure) can be achieved by | Chegg.com
BALD Engineering - Born in Finland, Born to ALD: Applied Materials Introduces Materials Engineering Solutions for DRAM Scaling
